Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process

Aniktar H., Savci H. Ş.

Progress In Electromagnetics Research C, cilt.129, ss.173-186, 2023 (Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 129
  • Basım Tarihi: 2023
  • Doi Numarası: 10.2528/pierc22112103
  • Dergi Adı: Progress In Electromagnetics Research C
  • Derginin Tarandığı İndeksler: Scopus, Applied Science & Technology Source, Compendex, Computer & Applied Sciences, INSPEC
  • Sayfa Sayıları: ss.173-186
  • İstanbul Medipol Üniversitesi Adresli: Evet

Özet

This study presents the generation of a scalable model based on measurement-aided numerical calculations for MiMCap (Metal-Insulator-Metal Capacitor) structures with a 0.25 µm SiGe-C BiCMOS technology. Various MiM capacitor structures with several different areas and peripheral sizes are fabricated in an in-house developed BiCMOS process. A set of fix-size models and a generic, scalable model are developed based on numerical EM calculations. The validity of the constructed model is verified with the measurement results. The model includes the breakdown voltage ratings, which are also extracted through the measurements. The model, EM simulations, and measurement results are in good agreement.