H. Aniktar And H. Ş. Savci, "Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process," Progress In Electromagnetics Research C , vol.129, pp.173-186, 2023
Aniktar, H. And Savci, H. Ş. 2023. Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process. Progress In Electromagnetics Research C , vol.129 , 173-186.
Aniktar, H., & Savci, H. Ş., (2023). Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process. Progress In Electromagnetics Research C , vol.129, 173-186.
Aniktar, Huseyin, And Hüseyin Şerif SAVCI. "Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process," Progress In Electromagnetics Research C , vol.129, 173-186, 2023
Aniktar, Huseyin And Savci, Hüseyin Ş. . "Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process." Progress In Electromagnetics Research C , vol.129, pp.173-186, 2023
Aniktar, H. And Savci, H. Ş. (2023) . "Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process." Progress In Electromagnetics Research C , vol.129, pp.173-186.
@article{article, author={Huseyin Aniktar And author={Hüseyin Şerif SAVCI}, title={Numerical and Measurement Based Modeling of a MiM Capacitor in a 0.25 µm SiGe-C BiCMOS Process}, journal={Progress In Electromagnetics Research C}, year=2023, pages={173-186} }